onsemi · FETs & Power MOSFETs · MPN FQB20N06LTM
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| Gate Charge(Qg) | 13nC |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 55mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 630pF |
| Type | N-Channel |
60V 21A 2.5V 53W 55mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS