onsemi · FETs & Power MOSFETs · MPN FQB1P50TM
No reviews yet — be the first to review onsemi FQB1P50TM.
| Gate Charge(Qg) | 11nC |
|---|---|
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| RDS(on) | 10.5Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 350pF |
| Vgs | ±30V |
P-Channel 500V 1.5A 3.13W Surface Mount D2PAK