onsemi · FETs & Power MOSFETs · MPN FQB19N20TM
No reviews yet — be the first to review onsemi FQB19N20TM.
| Gate Charge(Qg) | 40nC@160V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 19.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
N-Channel 200V 19.4A 3.13W Surface Mount TO-263(D2PAK)