onsemi · FETs & Power MOSFETs · MPN FQB19N20LTM
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| Gate Charge(Qg) | 27nC@5V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 21A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.13W;140W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.2nF |
N-Channel 200V 21A 3.13W 140W Surface Mount TO-263(D2PAK)