onsemi · FETs & Power MOSFETs · MPN FQB19N20CTM
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 170mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.08nF |
N-Channel 200V 19A 3.13W Surface Mount D2PAK