onsemi · FETs & Power MOSFETs · MPN FQB15P12TM
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 120V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.75W |
| Reverse Transfer Capacitance (Crss@Vds) | 140pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Type | P-Channel |
120V 15A 4V 3.75W 200mΩ@10V 1 P-Channel P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS