onsemi · FETs & Power MOSFETs · MPN FQB13N06LTM
No reviews yet — be the first to review onsemi FQB13N06LTM.
| Gate Charge(Qg) | 6.4nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 13.6A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 45W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 110mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 350pF |
| Type | N-Channel |
60V 13.6A 2.5V 45W 110mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS