onsemi · FETs & Power MOSFETs · MPN FQB12P20TM
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 11.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W;120W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 470mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF |
200V 11.5A 5V 470mΩ@10V 1 P-Channel TO-263(D2PAK) Single FETs, MOSFETs RoHS