onsemi · FETs & Power MOSFETs · MPN FQB12N60TM
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 270pF |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 3.13W |
| Reverse Transfer Capacitance (Crss@Vds) | 35pF |
| RDS(on) | 700mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.9nF |
| Type | N-Channel |
600V 10.5A 5V 3.13W 700mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs