onsemi · FETs & Power MOSFETs · MPN FQB11P06TM
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| Gate Charge(Qg) | 13nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 140mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 420pF |
60V 11.4A 4V 53W 140mΩ@10V 1 P-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS