onsemi · FETs & Power MOSFETs · MPN FQB11N40CTM
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| Gate Charge(Qg) | 35nC@320V |
|---|---|
| Drain to Source Voltage | 400V |
| Current - Continuous Drain(Id) | 10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 530mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.09nF |
N-Channel 400V 10.5A 135W Surface Mount D2PAK