onsemi FQAF13N80

onsemi · FETs & Power MOSFETs · MPN FQAF13N80

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Specifications

Gate Charge(Qg)88nC
Drain to Source Voltage800V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation120W
Reverse Transfer Capacitance (Crss@Vds)39pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.5nF

Technical details

N-Channel 800V 8A 120W Through Hole TO-3PF-3

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