onsemi · FETs & Power MOSFETs · MPN FQAF13N80
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| Gate Charge(Qg) | 88nC |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 39pF |
| RDS(on) | 750mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.5nF |
N-Channel 800V 8A 120W Through Hole TO-3PF-3