onsemi · FETs & Power MOSFETs · MPN FQA9N90-F109
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| Gate Charge(Qg) | 72nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 8.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 240W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 1.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
900V 8.6A 5V 240W 1.3Ω@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS