onsemi FQA8N100C

onsemi · FETs & Power MOSFETs · MPN FQA8N100C

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Specifications

Gate Charge(Qg)70nC@800V
Drain to Source Voltage1kV
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation225W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)1.45Ω@10V
Number1 N-channel
Input Capacitance(Ciss)3.22nF

Technical details

1kV 8A 5V 225W 1.45Ω@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS

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