onsemi · FETs & Power MOSFETs · MPN FQA7N80C-F109
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| Gate Charge(Qg) | 27nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 198W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 1.57Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.29nF |
800V 7A 5V 198W 1.57Ω@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS