onsemi · FETs & Power MOSFETs · MPN FQA6N90
No reviews yet — be the first to review onsemi FQA6N90.
| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 185pF |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 198W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 1.9Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.88nF |
900V 6.4A 5V 198W 1.9Ω@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS