onsemi · FETs & Power MOSFETs · MPN FQA65N20
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| Gate Charge(Qg) | 200nC@160V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| RDS(on) | 32mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.9nF |
200V 65A 5V 310W 32mΩ@10V 1 N-channel TO-3P Single FETs, MOSFETs