onsemi · FETs & Power MOSFETs · MPN FQA62N25C
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| Gate Charge(Qg) | 130nC@200V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 62A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 298W |
| Reverse Transfer Capacitance (Crss@Vds) | 83pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.28nF |
250V 62A 4V 298W 35mΩ@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS