onsemi · FETs & Power MOSFETs · MPN FQA5N90
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| Gate Charge(Qg) | 40nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 145pF |
| Current - Continuous Drain(Id) | 5.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 185W |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 2.3Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.55nF |
| Type | N-Channel |
900V 5.8A 5V 185W 2.3Ω@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS