onsemi · FETs & Power MOSFETs · MPN FQA55N25
No reviews yet — be the first to review onsemi FQA55N25.
| Gate Charge(Qg) | 180nC@200V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 55A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 40mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
250V 55A 3V 310W 40mΩ@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS