onsemi FQA38N30

onsemi · FETs & Power MOSFETs · MPN FQA38N30

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage300V
Output Capacitance(Coss)870pF
Current - Continuous Drain(Id)38.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.4nF
TypeN-Channel

Technical details

300V 38.4A 5V 85mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS

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