onsemi · FETs & Power MOSFETs · MPN FQA35N40
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 400V |
| Gate Charge(Qg) | 140nC |
| Output Capacitance(Coss) | 950pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 310W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 105mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.6nF |
400V 35A 5V 310W 105mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS