onsemi · FETs & Power MOSFETs · MPN FQA32N20C
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| Gate Charge(Qg) | 110nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 32A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 204W |
| Reverse Transfer Capacitance (Crss@Vds) | 185pF |
| RDS(on) | 68mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.22nF |
200V 32A 4V 204W 68mΩ@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS