onsemi FQA28N50F

onsemi · FETs & Power MOSFETs · MPN FQA28N50F

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Specifications

Drain to Source Voltage500V
Gate Charge(Qg)140nC@10V
Output Capacitance(Coss)830pF
Current - Continuous Drain(Id)28.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation310W
Reverse Transfer Capacitance (Crss@Vds)80pF
RDS(on)160mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.6nF
TypeN-Channel

Technical details

500V 28.4A 5V 310W 160mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS

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