onsemi · FETs & Power MOSFETs · MPN FQA28N15
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| Gate Charge(Qg) | 52nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 227W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 67mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
150V 33A 4V 227W 67mΩ@10V 1 N-channel TO-3P Single FETs, MOSFETs RoHS