onsemi · FETs & Power MOSFETs · MPN FQA160N08
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| Gate Charge(Qg) | 225nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 160A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 375W |
| Reverse Transfer Capacitance (Crss@Vds) | 530pF |
| RDS(on) | 5.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.1nF |
80V 160A 4V 375W 5.6mΩ@10V 1 N-channel TO-3P-3 Single FETs, MOSFETs RoHS