onsemi FQA140N10

onsemi · FETs & Power MOSFETs · MPN FQA140N10

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Specifications

Gate Charge(Qg)285nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)2.6nF
Current - Continuous Drain(Id)140A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation375W
Reverse Transfer Capacitance (Crss@Vds)550pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.9nF
TypeN-Channel

Technical details

100V 140A 4V 375W 10mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS

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