onsemi · FETs & Power MOSFETs · MPN FQA11N90-F109
No reviews yet — be the first to review onsemi FQA11N90-F109.
| Gate Charge(Qg) | 72nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 260pF |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 960mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.7nF |
| Type | N-Channel |
N-Channel 900V Through Hole TO-3PN