onsemi · FETs & Power MOSFETs · MPN FQA11N90
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| Gate Charge(Qg) | 94nC@10V |
|---|---|
| Drain to Source Voltage | 900V |
| Output Capacitance(Coss) | 340pF |
| Current - Continuous Drain(Id) | 11.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF |
| RDS(on) | 960mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | N-Channel |
900V 11.4A 5V 300W 960mΩ@10V 1 N-channel N-Channel TO-3P Single FETs, MOSFETs RoHS