onsemi FJP5027RTU

onsemi · Transistors (BJTs) · MPN FJP5027RTU

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)15MHz
Collector - Emitter Voltage VCEO800V
Emitter-Base Voltage VEBO7V
DC Current Gain15
Pd - Power Dissipation50W
typeNPN
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))2V

Technical details

800V 15 NPN 3A TO-220 Single Bipolar Transistors RoHS

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