onsemi FJP2160DTU

onsemi · Transistors (BJTs) · MPN FJP2160DTU

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO800V
DC Current Gain20
Pd - Power Dissipation100W
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+125℃
Vce Saturation(VCE(sat))750mV

Technical details

800V 20 NPN 2A TO-220-3 Single Bipolar Transistors RoHS

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