onsemi FJD5555TM

onsemi · Transistors (BJTs) · MPN FJD5555TM

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
Emitter-Base Voltage VEBO14V
DC Current Gain20
Pd - Power Dissipation100W
ConfigurationStandalone
Number1 NPN
typeNPN
Current - Collector(Ic)5A
Operating Temperature-
Vce Saturation(VCE(sat))1.5V

Technical details

Bipolar (BJT) Transistor NPN 400V 5A 100W Surface Mount TO-252(DPAK)

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