onsemi · Transistors (BJTs) · MPN FJD5553TM
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| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 400V |
| DC Current Gain | 30 |
| Pd - Power Dissipation | 1.25W |
| type | NPN |
| Current - Collector(Ic) | 3A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 230mV |
400V 30 NPN 3A TO-252AA Single Bipolar Transistors RoHS