onsemi FJD5553TM

onsemi · Transistors (BJTs) · MPN FJD5553TM

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)-
Collector - Emitter Voltage VCEO400V
DC Current Gain30
Pd - Power Dissipation1.25W
typeNPN
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))230mV

Technical details

400V 30 NPN 3A TO-252AA Single Bipolar Transistors RoHS

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