onsemi · Thyristors & Power Discretes · MPN FGHL50T65SQ
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| Td(off) | 93ns |
|---|---|
| Pd - Power Dissipation | 268W |
| Td(on) | 19ns |
| Operating Temperature | -55℃~+175℃ |
| Current - Collector(Ic) | 100A |
| Collector-Emitter Breakdown Voltage (Vces) | 650V |
| Reverse Transfer Capacitance (Cres) | 12pF |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V |
| Vce Saturation(VCE(sat)) | 1.6V |
| Collector Cut-Off Current (Ices) | 250uA |
| Switching Energy(Eoff) | 88uJ |
| Turn-On Energy (Eon) | 410uJ |
268W 100A 650V TO-247-3 Single IGBTs RoHS