onsemi · FETs & Power MOSFETs · MPN FDZ663P
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| Gate Charge(Qg) | 8.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 2.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 288mΩ@1.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 525pF |
| Type | P-Channel |
20V 2.7A 1.2V 1.3W 288mΩ@1.5V 1 P-Channel P-Channel WLCSP-4(0.8x0.8) Single FETs, MOSFETs RoHS