onsemi FDZ661PZ

onsemi · FETs & Power MOSFETs · MPN FDZ661PZ

No reviews yet — be the first to review onsemi FDZ661PZ.

Specifications

Gate Charge(Qg)8.8nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)2.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)140mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)555pF

Technical details

P-Channel 20V 2.6A 1.3W Surface Mount WLCSP-4(0.8X0.8)

Related FETs & Power MOSFETs