onsemi · FETs & Power MOSFETs · MPN FDZ3N513ZT
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 1nC@4.5V |
| Output Capacitance(Coss) | 85pF |
| Current - Continuous Drain(Id) | 1.1A |
| Operating Temperature - | -55℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 520mΩ@3.2V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 85pF |
30V 1.1A 1.5V 1W 520mΩ@3.2V 1 P-Channel WLCSP-4(1x1) Single FETs, MOSFETs RoHS