onsemi · FETs & Power MOSFETs · MPN FDZ193P
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| Gate Charge(Qg) | 10nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 600mV |
| Pd - Power Dissipation | 1.9W |
| Reverse Transfer Capacitance (Crss@Vds) | 90pF |
| RDS(on) | 90mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 660pF |
20V 600mV 1.9W 90mΩ@4.5V 1 P-Channel WLCSP-6(1x1.5) Single FETs, MOSFETs RoHS