onsemi · FETs & Power MOSFETs · MPN FDZ1905PZ
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | - |
| RDS(on) | 126mΩ@4.5V |
| Pd - Power Dissipation | 900mW |
| Gate Threshold Voltage (Vgs(th)) | - |
| Drain to Source Voltage | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | - |
| Operating Temperature | -55℃~+150℃ |
126mΩ@4.5V 900mW 2 P-Channel WLCSP-6(1.5x1x0.6) FET, MOSFET Arrays RoHS