onsemi FDZ1905PZ

onsemi · FETs & Power MOSFETs · MPN FDZ1905PZ

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)-
RDS(on)126mΩ@4.5V
Pd - Power Dissipation900mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage-
Reverse Transfer Capacitance (Crss@Vds)-
Number2 P-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

126mΩ@4.5V 900mW 2 P-Channel WLCSP-6(1.5x1x0.6) FET, MOSFET Arrays RoHS

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