onsemi FDZ1827NZ

onsemi · FETs & Power MOSFETs · MPN FDZ1827NZ

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Specifications

ConfigurationCommon Drain
Current - Continuous Drain(Id)10A
Pd - Power Dissipation2W
RDS(on)18mΩ@2.5V
Gate Threshold Voltage (Vgs(th))900mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)380pF
Number2 N-Channel
Input Capacitance(Ciss)2.055nF
Gate Charge(Qg)24nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

10A 2W 18mΩ@2.5V 900mV 2 N-Channel WLCSP-6(1.3x2.3) FET, MOSFET Arrays RoHS

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