onsemi · FETs & Power MOSFETs · MPN FDZ1827NZ
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| Configuration | Common Drain |
|---|---|
| Current - Continuous Drain(Id) | 10A |
| Pd - Power Dissipation | 2W |
| RDS(on) | 18mΩ@2.5V |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 2.055nF |
| Gate Charge(Qg) | 24nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
10A 2W 18mΩ@2.5V 900mV 2 N-Channel WLCSP-6(1.3x2.3) FET, MOSFET Arrays RoHS