onsemi · FETs & Power MOSFETs · MPN FDY4000CZ
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| Gate Charge(Qg) | 1.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 600mA;350mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 446mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 700mΩ@4.5V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 60pF |
20V 1.5V 446mW 700mΩ@4.5V 1 N-Channel + 1 P-Channel SOT-563F Single FETs, MOSFETs RoHS