onsemi · FETs & Power MOSFETs · MPN FDY300NZ
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| Gate Charge(Qg) | 1.1nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 600mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 1W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 850mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 60pF |
| Type | N-Channel |
20V 600mA 1.3V 1W 850mΩ@2.5V 1 N-channel N-Channel SOT-523F Single FETs, MOSFETs RoHS