onsemi FDY2000PZ

onsemi · FETs & Power MOSFETs · MPN FDY2000PZ

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Specifications

Current - Continuous Drain(Id)350mA
Pd - Power Dissipation625mW
RDS(on)1.2Ω@4.5V
Gate Threshold Voltage (Vgs(th))1.5V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)15pF
Number2 P-Channel
Input Capacitance(Ciss)100pF
Gate Charge(Qg)1.4nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

350mA 625mW 1.2Ω@4.5V 1.5V 2 P-Channel SOT-563F FET, MOSFET Arrays RoHS

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