onsemi FDY1002PZ

onsemi · FETs & Power MOSFETs · MPN FDY1002PZ

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Specifications

Current - Continuous Drain(Id)830mA
RDS(on)500mΩ@4.5V
Pd - Power Dissipation625mW
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)30pF
Number2 P-Channel
Input Capacitance(Ciss)135pF
Gate Charge(Qg)3.1nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 20V 0.83A 0.625W Surface Mount SOT-563F

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