onsemi · FETs & Power MOSFETs · MPN FDWS9511L-F085
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| Gate Charge(Qg) | 8nC@4.5V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 9.1A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.2nF |
40V 9.1A 1.8V 3W 17mΩ@10V 1 P-Channel DFN-8(5.1x6.3) Single FETs, MOSFETs RoHS