onsemi · FETs & Power MOSFETs · MPN FDWS9509L-F085
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 107W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 6.3mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.36nF |
40V 65A 1.7V 107W 6.3mΩ@10V 1 P-Channel Power-56 Single FETs, MOSFETs RoHS