onsemi · FETs & Power MOSFETs · MPN FDV303N
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| Gate Charge(Qg) | 2.3nC@4.5V |
|---|---|
| Drain to Source Voltage | 25V |
| Output Capacitance(Coss) | 28pF |
| Current - Continuous Drain(Id) | 680mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 800mV |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 450mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 50pF |
| Vgs | ±8V |
N-Channel 25V 680mA 350mW Surface Mount SOT-23