onsemi · FETs & Power MOSFETs · MPN FDV302P
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| Gate Charge(Qg) | 310pC@5V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 120mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 10Ω@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 11pF |
P-Channel 25V 0.12A 0.35W Surface Mount SOT-23