onsemi FDU5N60NZTU

onsemi · FETs & Power MOSFETs · MPN FDU5N60NZTU

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)1.65Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF

Technical details

600V 4A 5V 1.65Ω@10V 1 N-channel TO-251-3 Single FETs, MOSFETs RoHS

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