onsemi · FETs & Power MOSFETs · MPN FDT86256
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 2.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.4pF |
| RDS(on) | 845mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 73pF |
N-Channel 150V 1.2A 2.3W Surface Mount SOT-223